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MGF4936AM Datasheet, Mitsubishi Electric Semiconductor

MGF4936AM hemt equivalent, super low noise ingaas hemt.

MGF4936AM Avg. rating / M : 1.0 rating-12

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MGF4936AM Datasheet

Features and benefits

Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE G.

Description

The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure.

Image gallery

MGF4936AM Page 1 MGF4936AM Page 2 MGF4936AM Page 3

TAGS

MGF4936AM
SUPER
LOW
NOISE
InGaAs
HEMT
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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